The memristor, or resistive memory, is a two-terminal device that could be used as the electronic equivalent of a brain-synapse, and the aim of the proposed work is to investigate the failure mechanisms in nanoscale organic memristor devices.

This work is a key milestone that would contribute to enabling, in future, the creation of hardware Artificial Neural Networks (ANNs) aimed at modelling degenerative brain diseases such as Alzheimer, Parkinson, and Motor Neurone diseases.